A revised checklist of Hawaiian mosses

A revised and updated literature-based checklist of Hawaiian mosses is presented. Geographic coverage includes the eight main Hawaiian Islands; the Northwestern Hawaiian Islands are excluded. The checklist is alphabetically ordered by scientific names; the family is noted for each genus. Synonyms and misapplied names are cross-referenced to the accepted names. A bibliography of supporting references is included

Comparing proxy rated quality of life of people living with dementia in care homes

Background: Improving quality of life (QOL) for people with dementia is a priority. In care homes, we often rely on proxy ratings from staff and family but we do not know if, or how, they differ in care homes. Methods: We compared 1056 pairs of staff and family DEMQOL-Proxy ratings from 86 care homes across England. We explored factors associated with ratings quantitatively using multilevel modelling and, qualitatively, through thematic analysis of 12 staff and 12 relative interviews. Results: Staff and family ratings were weakly correlated (ρs = 0.35). Median staff scores were higher than family's (104 v. 101; p < 0.001). Family were more likely than staff to rate resident QOL as ‘Poor’ (χ2 = 55.91, p < 0.001). Staff and family rated QOL higher when residents had fewer neuropsychiatric symptoms and severe dementia. Staff rated QOL higher in homes with lower staff:resident ratios and when staff were native English speakers. Family rated QOL higher when the resident had spent longer living in the care home and was a native English. Spouses rated residents’ QOL higher than other relatives. Qualitative results suggest differences arise because staff felt good care provided high QOL but families compared the present to the past. Family judgements centre on loss and are complicated by decisions about care home placement and their understandings of dementia. Conclusion: Proxy reports differ systematically between staff and family. Reports are influenced by the rater:staff and family may conceptualise QOL differently

Evolution of InAs branches in InAs/GaAs nanowire heterostructures

Branched nanowireheterostructures of InAs∕GaAs were observed during Au-assisted growth of InAs on GaAsnanowires. The evolution of these branches has been determined through detailed electron microscopy characterization with the following sequence: (1) in the initial stage of InAsgrowth, the Au droplet is observed to slide down the side of the GaAsnanowire, (2) the downward movement of Aunanoparticle later terminates when the nanoparticle encounters InAsgrowing radially on the GaAsnanowire sidewalls, and (3) with further supply of In and As vapor reactants, the Aunanoparticles assist the formation of InAs branches with a well-defined orientation relationship with GaAs∕InAs core/shell stems. We anticipate that these observations advance the understanding of the kink formation in axial nanowireheterostructures.The Australian Research Council is acknowledged for the financial support of this project. One of the authors M.P. acknowledges the support of an International Postgraduate Research Scholarship

Ultrafast trapping times in ion implanted InP

As⁺ and P⁺implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1×10¹⁶ cm⁻² and p-type InP was implanted with doses between 1×10¹² and 1×10¹⁶ cm⁻². Subsequently, rapid thermal annealing at temperatures between 400 and 700 °C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implantedp-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity

Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition

This paper presents a study on the strain relaxation and phonon confinement effect in InAsSb/InP quantum dashes QDashes. The phonon mode with a frequency between that of InAs-like longitudinal optical mode and that of InP transverse optical mode is determined to be originated from InAsSb QDashes. Despite the small height of the QDashes, their phonon frequency is found to be mainly determined by the strain relaxation in the dashes. With increasing InAsSb deposition thickness and Sb composition in InAsSb dashes, the phonon mode shows an upward shift of its frequency due to the increased compressive strain.Financial support from Australian Research Council DP0774366 is gratefully acknowledged

Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

Highly lattice mismatched (7.8%) GaAs∕GaSbnanowireheterostructures were grown by metal-organic chemical vapor deposition and their detailed structural characteristics were determined by electron microscopy. The facts that (i) no defects have been found in GaSb and its interfaces with GaAs and (ii) the lattice mismatch between GaSb∕GaAs was fully relaxed suggest that the growth of GaSbnanowires is purely governed by the thermodynamics. The authors believe that the low growth rate of GaSbnanowires leads to the equilibrium growth

Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence (PL). Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N incorporation are suggested to be two major factors affecting the optical properties.The authors would like to thank the Commonwealth Department of Education, Science, and Training and the Australian Research Council for their financial support

Combined optical trapping and microphotoluminescence of single InP nanowires

In this letter, we demonstrate that microphotoluminescence may be combined with optical trapping for effective optical characterization of single target InP semiconductor nanowires in suspension. Using this technique, we may investigate structural properties of optically trapped nanowires, such as crystalline polytypes and stacking faults. This arrangement may also be used to resolve structural variations along the axis of the trapped nanowire. These results show that photoluminescence measurements may be coupled with optical tweezers without degrading the performance of the optical trap and provide a powerful interrogation tool for preselection of components for nanowire photonic devices.We thank the Australian Research Council for the financial support of this research

Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells

We demonstrate three-dimensional (3D) electronic spectroscopy of excitons in a double quantum well system using a three-dimensional phase retrieval algorithm to obtain the phase information that is lost in the measurement of intensities. By extending the analysis of two-dimensional spectroscopy to three dimensions, contributions from different quantum mechanical pathways can be further separated allowing greater insight into the mechanisms responsible for the observed peaks. By examining different slices of the complete three-dimensional spectrum, not only can the relative amplitudes be determined, but the peak shapes can also be analysed to reveal further details of the interactions with the environment and inhomogeneous broadening. We apply this technique to study the coupling between two coupled quantum wells, 5.7 nm and 8 nm wide, separated by a 4 nm barrier. Coupling between the heavy-hole excitons of each well results in a circular cross-peak indicating no correlation of the inhomogeneous broadening. An additional cross-peak is isolated in the 3D spectrum which is elongated in the diagonal direction indicating correlated inhomogeneous broadening. This is attributed to coupling of the excitons involving the two delocalised light-hole states and the electron state localised on the wide well. The attribution of this peak and the analysis of the peak shapes is supported by numerical simulations of the electron and hole wavefunctions and the three-dimensional spectrum based on a density matrix approach. An additional benefit of extending the phase retrieval algorithm from two to three dimensions is that it becomes substantially more reliable and less susceptible to noise as a result of the more extensive use of a priori information.The authors gratefully acknowledge the Australian Research Council and Australian National Fabrication Facility for financial support